Freescale Semiconductor
Technical Data
Document Number: AFT09MS031N
Rev. 1, 8/2012
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
Designed for mobile two--way radio applications with frequencies from
764 to 941 MHz. The high gain, ruggedness and broadband performance of
these devices make them ideal for large--signal, common source amplifier
applications in mobile radio equipment.
Narrowband Performance
(13.6 Vdc, I
DQ
= 500 mA, T
A
= 25°C, CW)
Frequency
(MHz)
764
870
941
G
ps
(dB)
18.0
17.2
15.7
η
D
(%)
74.1
71.0
68.1
P1dB
(W)
32
31
31
TO-
-270-
-2
PLASTIC
AFT09MS031NR1
AFT09MS031NR1
AFT09MS031GNR1
764-
-941 MHz, 31 W, 13.6 V
WIDEBAND
RF POWER LDMOS TRANSISTORS
800 MHz Broadband Performance
(13.6 Vdc, I
DQ
= 100 mA, T
A
= 25°C, CW)
Frequency
(MHz)
760
820
870
G
ps
(dB)
15.7
15.7
15.5
η
D
(%)
62.0
63.0
61.0
P1dB
(W)
44
37
36
Load Mismatch/Ruggedness
Frequency
(MHz)
870
(1)
870
(2)
Signal
Type
CW
VSWR
>65:1 at all
Phase Angles
P
in
(W)
1.2
(3 dB Overdrive)
2.0
(3 dB Overdrive)
Gate
Test
Voltage
17
Result
No Device
Degradation
TO-
-270- GULL
-2
PLASTIC
AFT09MS031GNR1
1. Measured in 870 MHz narrowband test circuit.
2. Measured in 760--870 MHz broadband reference circuit.
Drain
Features
•
Characterized for Operation from 764 to 941 MHz
•
Unmatched Input and Output Allowing Wide Frequency Range Utilization
•
Integrated ESD Protection
•
Integrated Stability Enhancements
•
Wideband — Full Power Across the Band (764–870 MHz)
•
225°C Capable Plastic Package
•
Exceptional Thermal Performance
•
High Linearity for: TETRA, SSB, LTE
•
Cost--effective Over--molded Plastic Packaging
•
In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13 inch Reel.
Typical Applications
•
Output Stage 800 MHz Trunking Band Mobile Radio
•
Output Stage 900 MHz Trunking Band Mobile Radio
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
©
Freescale Semiconductor, Inc., 2012. All rights reserved.
AFT09MS031NR1 AFT09MS031GNR1
1
RF Device Data
Freescale Semiconductor, Inc.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature Range
(1,2)
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
P
D
Value
--0.5, +40
--6.0, +12
17, +0
--65 to +150
--40 to +150
--40 to +225
317
1.59
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 81°C, 31 W CW, 13.6 Vdc, I
DQ
= 500 mA, 870 MHz
Symbol
R
θJC
Value
(2,3)
0.63
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2, passes 2500 V
A, passes 100 V
IV, passes 1200 V
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 40 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 13.6 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 115
μAdc)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 1.2 Adc)
Forward Transconductance
(V
GS
= 10 Vdc, I
D
= 10 Adc)
V
GS(th)
V
DS(on)
g
fs
1.6
—
—
2.1
0.1
7.8
2.6
—
—
Vdc
Vdc
S
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
2
1
600
μAdc
μAdc
nAdc
Symbol
Min
Typ
Max
Unit
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
(continued)
AFT09MS031NR1 AFT09MS031GNR1
2
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Dynamic Characteristics
Reverse Transfer Capacitance
(V
DS
= 13.6 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 13.6 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 13.6 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
Common--Source Amplifier Power Gain
Drain Efficiency
Frequency
(MHz)
870
Signal
Type
CW
P
in
(W)
1.2
(3 dB Overdrive)
C
rss
C
oss
C
iss
—
—
—
2.1
63
140
—
—
—
pF
pF
pF
Symbol
Min
Typ
Max
Unit
Functional Tests
(1)
(In Freescale Narrowband Test Fixture, 50 ohm system) V
DD
= 13.6 Vdc, I
DQ
= 500 mA, P
out
= 31 W, f = 870 MHz
G
ps
η
D
16.0
68.0
17.2
71.0
18.5
—
dB
%
Load Mismatch/Ruggedness
(In Freescale Test Fixture, 50 ohm system, I
DQ
= 500 mA)
VSWR
>65:1 at all Phase Angles
Test Voltage, V
DD
17
Result
No Device Degradation
1. Measurement made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GN) parts.
AFT09MS031NR1 AFT09MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
3
TYPICAL CHARACTERISTICS
300
C
iss
I
DS
, DRAIN CURRENT (AMPS)
100
C, CAPACITANCE (pF)
C
oss
9
8
7
6
5
4
3
2
1
0
0
5
10
15
20
0
2
4
6
8
10
12
14
16
18
20
V
DS
, DRAIN--SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN--SOURCE VOLTAGE (VOLTS)
Note:
Measured with both sides of the transistor tied together.
2.5 Vdc
3.5 Vdc
3.25 Vdc
3.0 Vdc
T
A
= 25°C
V
GS
= 4.0 Vdc
Measured with
±30
mV(rms)ac @ 1 MHz
V
GS
= 0 Vdc
10
C
rss
1
Figure 2. Capacitance versus Drain-
-Source Voltage
Figure 3. Drain Current versus Drain-
-Source Voltage
10
9
10
8
MTTF (HOURS)
10
7
10
6
3.9 Amps
10
5
10
4
90
110
130
150
170
190
210
230
250
T
J
, JUNCTION TEMPERATURE (°C)
Note:
MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at http:/www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
V
DD
= 13.6 Vdc
I
D
= 2.6 Amps
3.2 Amps
Figure 4. MTTF versus Junction Temperature - CW
-
AFT09MS031NR1 AFT09MS031GNR1
4
RF Device Data
Freescale Semiconductor, Inc.
870 MHz NARROWBAND PRODUCTION TEST FIXTURE
C9
C10
C13
V
GG
B1
C14
AFT09MS031N
Rev. 0
C15
C16
V
DD
B2
C11
C12
C7
L1
C3
CUT OUT AREA
C5
L2
L3
C4
C6
C8
C2
C1
Figure 5. AFT09MS031NR1 Narrowband Test Circuit Component Layout — 870 MHz
Table 6. AFT09MS031NR1 Narrowband Test Circuit Component Designations and Values — 870 MHz
Part
B1, B2
C1
C2, C14, C15
C3, C4, C5, C6
C7, C8
C9
C10, C11
C12
C13
C16
L1
L2
L3
PCB
Description
RF Beads, Long
3.9 pF Chip Capacitor
56 pF Chip Capacitors
10 pF Chip Capacitors
3.6 pF Chip Capacitors
2.5
μF
Chip Capacitor
0.1
μF
Chip Capacitors
10,000 pF Chip Capacitor
22
μF,
25 V Tantalum Capacitor
330
μF,
35 V Electrolytic Capacitor
8.0 nH Inductor
18.5 nH Inductor
5.0 nH Inductor
0.030″,
ε
r
= 3.5
Part Number
2743021447
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Manufacturer
Fair--Rite
ATC
ATC
ATC
ATC
Murata
Kemet
ATC
AVX
Multicomp
Coilcraft
Coilcraft
Coilcraft
Rogers
AFT09MS031NR1 AFT09MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
5
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